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dc.contributor.authorDanno, Ken
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2006-12-25T02:30:08Z-
dc.date.available2006-12-25T02:30:08Z-
dc.date.issued2005-03-21-
dc.identifier.citationK. Danno et al., Appl. Phys. Lett. 86, 122104 (2005)-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2433/24193-
dc.format.extent56437 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.titleMidgap levels in both n- and p-type 4H-SiC epilayers investigated by deep level transient spectroscopyen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00543431-
dc.identifier.jtitleApplied Physics Lettersen
dc.identifier.volume86-
dc.identifier.issue12-
dc.relation.doi10.1063/1.1886904-
dc.textversionpublisher-
dc.identifier.artnum122104-
dc.relation.urlhttp://link.aip.org/link/?apl/86/122104-
dcterms.accessRightsopen access-
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