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| File | Description | Size | Format | |
|---|---|---|---|---|
| ApplPhysLett_86_122104.pdf | 55.11 kB | Adobe PDF | View/Open |
| Title: | Midgap levels in both n- and p-type 4H-SiC epilayers investigated by deep level transient spectroscopy |
| Authors: | Danno, K Kimoto, T    https://orcid.org/0000-0002-6649-2090 (unconfirmed)Matsunami, H |
| Issue Date: | 21-Mar-2005 |
| Publisher: | American Institute of Physics |
| Citation: | K. Danno et al., Appl. Phys. Lett. 86, 122104 (2005) |
| Journal title: | Applied Physics Letters |
| Volume: | 86 |
| Issue: | 12 |
| Thesis number: | 122104 |
| Rights: | Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
| URI: | http://hdl.handle.net/2433/24193 |
| DOI(Published Version): | 10.1063/1.1886904 |
| Link: | Web of Science |
| Related Link: | http://link.aip.org/link/?apl/86/122104 |
| Appears in Collections: | Journal Articles |
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