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dc.contributor.authorKimoto, Tsunenobuen
dc.contributor.authorNakazawa, Satoshien
dc.contributor.authorHashimoto, Koichien
dc.contributor.authorMatsunami, Hiroyukien
dc.date.accessioned2006-12-25T02:30:16Z-
dc.date.available2006-12-25T02:30:16Z-
dc.date.issued2001-10-22-
dc.identifier.citationT. Kimoto et al., Appl. Phys. Lett. 79, 2761-2763 (2001)-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2433/24206-
dc.format.extent55221 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.titleReduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor depositionen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00543431-
dc.identifier.jtitleApplied Physics Lettersen
dc.identifier.volume79-
dc.identifier.issue17-
dc.identifier.spage2761-
dc.identifier.epage2763-
dc.relation.doi10.1063/1.1413724-
dc.textversionpublisher-
dc.relation.urlhttp://link.aip.org/link/?apl/79/2761-
dcterms.accessRightsopen access-
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