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| File | Description | Size | Format | |
|---|---|---|---|---|
| ApplPhysLett_79_2761.pdf | 53.93 kB | Adobe PDF | View/Open |
| Title: | Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition |
| Authors: | Kimoto, Tsunenobu    https://orcid.org/0000-0002-6649-2090 (unconfirmed)Nakazawa, Satoshi Hashimoto, Koichi Matsunami, Hiroyuki |
| Issue Date: | 22-Oct-2001 |
| Publisher: | American Institute of Physics |
| Citation: | T. Kimoto et al., Appl. Phys. Lett. 79, 2761-2763 (2001) |
| Journal title: | Applied Physics Letters |
| Volume: | 79 |
| Issue: | 17 |
| Start page: | 2761 |
| End page: | 2763 |
| Rights: | Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
| URI: | http://hdl.handle.net/2433/24206 |
| DOI(Published Version): | 10.1063/1.1413724 |
| Link: | Web of Science |
| Related Link: | http://link.aip.org/link/?apl/79/2761 |
| Appears in Collections: | Journal Articles |
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