Electrodeposition of Crystalline Si Films in KF–KCl Melts Using SiCl₄ Gas as a Si Source

Abstract

With the aim of developing a new production process of crystalline Si films, the electrodeposition of Si has been investigated in a water-soluble KF–KCl molten salt containing K₂SiF₆at 923 K and 1073 K. Cyclic voltammetry and galvanostatic electrolysis confirm that electrodeposition of crystalline Si on a silver substrate occurs at more negative potential than 0.8 V (vs. K⁺/K). The crystallite size of the deposited Si significantly increases when the experiment temperature is raised from 923 K to 1023 K. The electrodeposition of Si in the KF–KCl salt after the introduction of SiCl₄ was also confirmed.