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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1882-0786_ad15f3.pdf | 857.86 kB | Adobe PDF | 見る/開く |
| タイトル: | Rutile-type Ge_xSn_{1−x}O_2 alloy layers lattice-matched to TiO_2 substrates for device applications |
| 著者: | Takane, Hitoshi Oshima, Takayoshi Harada, Takayuki Kaneko, Kentaro Tanaka, Katsuhisa |
| 著者名の別形: | 高根, 倫史 大島, 孝仁 原田, 尚之 金子, 健太郎 田中, 勝久 |
| 発行日: | Jan-2024 |
| 出版者: | IOP Publishing The Japan Society of Applied Physics |
| 誌名: | Applied Physics Express |
| 巻: | 17 |
| 号: | 1 |
| 論文番号: | 011008 |
| 抄録: | We report the characterization and application of mist-CVD-grown rutile-structured Ge_xSn_{1−x}O_2 (x = ∼0.53) films lattice-matched to isostructural TiO_2(001) substrates. The grown surface was flat throughout the growth owing to the lattice-matching epitaxy. Additionally, the film was single-crystalline without misoriented domains and TEM-detectable threading dislocations due to the coherent heterointerface. Using the Ge_{0.49}Sn_{0.51}O_2 film with a carrier density of 7.8 × 10^{18} cm^{−3} and a mobility of 24 cm^2V^{−1}s^{−1}, lateral Schottky barrier diodes were fabricated with Pt anodes and Ti/Au cathodes. The diodes exhibited rectifying properties with a rectification ratio of 8.2 × 10^4 at ±5 V, showing the potential of Ge_xSn_{1−x}O_2 as a practical semiconductor. |
| 記述: | TiO₂に格子整合した高品質ルチル型GeₓSn₁−ₓO₂デバイスの動作実証 --高耐圧パワーデバイスへの応用--. 京都大学プレスリリース. 2024-01-19. |
| 著作権等: | © 2024 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
| URI: | http://hdl.handle.net/2433/286749 |
| DOI(出版社版): | 10.35848/1882-0786/ad15f3 |
| 関連リンク: | https://www.t.kyoto-u.ac.jp/ja/research/topics/20240119 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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