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dc.contributor.authorMa, Zongpengen
dc.contributor.authorSolís-Fernández, Pabloen
dc.contributor.authorHirata, Kaitoen
dc.contributor.authorLin, Yung-Changen
dc.contributor.authorShinokita, Keisukeen
dc.contributor.authorMaruyama, Minaen
dc.contributor.authorHonda, Kotaen
dc.contributor.authorKato, Tatsukien
dc.contributor.authorUchida, Aikaen
dc.contributor.authorOgura, Hirotoen
dc.contributor.authorOtsuka, Tomohiroen
dc.contributor.authorHara, Masahiroen
dc.contributor.authorMatsuda, Kazunarien
dc.contributor.authorSuenaga, Kazuen
dc.contributor.authorOkada, Susumuen
dc.contributor.authorKato, Toshiakien
dc.contributor.authorTakahashi, Yasufumien
dc.contributor.authorAgo, Hirokien
dc.contributor.alternativeマ, ゾンペンja
dc.contributor.alternativeソリス-フェルナンデス, パブロja
dc.contributor.alternative平田, 海斗ja
dc.contributor.alternative林, 永昌ja
dc.contributor.alternative篠北, 啓介ja
dc.contributor.alternative丸山, 実那ja
dc.contributor.alternative本田, 航大ja
dc.contributor.alternative加藤, 樹ja
dc.contributor.alternative内田, 愛佳ja
dc.contributor.alternative小倉, 宏斗ja
dc.contributor.alternative大塚, 朋廣ja
dc.contributor.alternative原, 正大ja
dc.contributor.alternative松田, 一成ja
dc.contributor.alternative末永, 和知ja
dc.contributor.alternative岡田, 晋ja
dc.contributor.alternative加藤, 俊顕ja
dc.contributor.alternative高橋, 康史ja
dc.contributor.alternative吾郷, 浩樹ja
dc.date.accessioned2025-02-04T05:30:08Z-
dc.date.available2025-02-04T05:30:08Z-
dc.date.issued2025-01-
dc.identifier.urihttp://hdl.handle.net/2433/291600-
dc.description水素発生と半導体応用を兼ね備えた二次元半導体ナノリボンを実現 MoS2ナノリボンで高い触媒活性とトランジスタ動作を実証. 京都大学プレスリリース. 2025-01-09.ja
dc.description.abstractTransition metal dichalcogenides (TMDs) exhibit unique properties and potential applications when reduced to one-dimensional (1D) nanoribbons (NRs), owing to quantum confinement and high edge densities. However, effective growth methods for self-aligned TMD NRs are still lacking. We demonstrate a versatile approach for lattice-guided growth of dense, aligned MoS₂ NR arrays via chemical vapor deposition (CVD) on anisotropic sapphire substrates, without tailored surface steps. This method enables the synthesis of NRs with widths below 10 nanometers and longitudinal axis parallel to the zigzag direction, being also extensible to the growth of WS₂ NRs and MoS₂-WS₂ heteronanoribbons. Growth is influenced by both substrate and CVD temperature, indicating the role of anisotropic precursor diffusion and substrate interaction. The 1D nature of the NRs was asserted by the observation of Coulomb blockade at low temperatures. Pronounced catalytic activity was observed at the edges of the NRs, indicating their promise for efficient catalysis.en
dc.language.isoeng-
dc.publisherAmerican Association for the Advancement of Science (AAAS)en
dc.rightsCopyright © 2025 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S.Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY).en
dc.rightsThis is an open-access article distributed under the terms of the Creative Commons Attribution license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/-
dc.titleLattice-guided growth of dense arrays of aligned transition metal dichalcogenide nanoribbons with high catalytic reactivityen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleScience Advancesen
dc.identifier.volume11-
dc.identifier.issue2-
dc.relation.doi10.1126/sciadv.adr8046-
dc.textversionpublisher-
dc.identifier.artnumeadr8046-
dc.addressInterdisciplinary Graduate School of Engineering Sciences, Kyushu Universityen
dc.addressFaculty of Engineering Sciences, Kyushu Universityen
dc.addressDepartment of Electronics, Graduate School of Engineering, Nagoya Universityen
dc.addressNanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST); The Institute of Scientific and Industrial Research (ISIR-SANKEN), Osaka Universityen
dc.addressInstitute of Advanced Energy, Kyoto Universityen
dc.addressDepartment of Physics, Graduate School of Pure and Applied Sciences, University of Tsukubaen
dc.addressDepartment of Electronics, Graduate School of Engineering, Nagoya Universityen
dc.addressGraduate School of Engineering, Tohoku Universityen
dc.addressFaculty of Engineering Sciences, Kyushu Universityen
dc.addressGraduate School of Engineering, Tohoku Universityen
dc.addressGraduate School of Engineering, Tohoku University; Research Institute of Electrical Communication, Tohoku University; Advanced Institute for Materials Research (AIMR), Tohoku University; Center for Science and Innovation in Spintronics, Tohoku University; Center for Emergent Matter Science, RIKENen
dc.addressFaculty of Advanced Science and Technology, Kumamoto University; Institute of Industrial Nanomaterials, Kumamoto Universityen
dc.addressInstitute of Advanced Energy, Kyoto Universityen
dc.addressThe Institute of Scientific and Industrial Research (ISIR-SANKEN), Osaka Universityen
dc.addressDepartment of Physics, Graduate School of Pure and Applied Sciences, University of Tsukubaen
dc.addressGraduate School of Engineering, Tohoku University; Advanced Institute for Materials Research (AIMR), Tohoku Universityen
dc.addressDepartment of Electronics, Graduate School of Engineering, Nagoya University; WPI Nano Life Science Institute (WPI-NanoLSI), Kanazawa Universityen
dc.addressInterdisciplinary Graduate School of Engineering Sciences, Kyushu University; Faculty of Engineering Sciences, Kyushu Universityen
dc.identifier.pmid39772681-
dc.relation.urlhttps://www.kyoto-u.ac.jp/ja/research-news/2025-01-09-0-
dcterms.accessRightsopen access-
dc.identifier.eissn2375-2548-
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