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dc.contributor.authorDanno, Ken
dc.contributor.authorKimoto, Ten
dc.contributor.authorAsano, Ken
dc.contributor.authorSugawara, Yen
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:57:42Z-
dc.date.available2007-03-28T03:57:42Z-
dc.date.issued2005-
dc.identifier.issn0361-5235-
dc.identifier.urihttp://hdl.handle.net/2433/3338-
dc.language.isoeng-
dc.publisherMINERALS METALS MATERIALS SOCen
dc.subjectSiCen
dc.subjectC faceen
dc.subjectepitaxial growthen
dc.subjecthigh purityen
dc.subjectdeep-level transient spectroscopy (DLTS)en
dc.titleFast epitaxial growth of high-purity 4H-SiC(000(1)over-bar) in a vertical hot-wall chemical vapor depositionen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJOURNAL OF ELECTRONIC MATERIALSen
dc.identifier.volume34-
dc.identifier.issue4-
dc.identifier.spage324-
dc.identifier.epage329-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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