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Title: Fast epitaxial growth of high-purity 4H-SiC(000(1)over-bar) in a vertical hot-wall chemical vapor deposition
Authors: Danno, K
Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Asano, K
Sugawara, Y
Matsunami, H
Keywords: SiC
C face
epitaxial growth
high purity
deep-level transient spectroscopy (DLTS)
Issue Date: 2005
Publisher: MINERALS METALS MATERIALS SOC
Journal title: JOURNAL OF ELECTRONIC MATERIALS
Volume: 34
Issue: 4
Start page: 324
End page: 329
URI: http://hdl.handle.net/2433/3338
Link: Web of Science
Appears in Collections:Graduate School of Engineering Literature Database

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