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dc.contributor.authorNegoro, Yen
dc.contributor.authorKimoto, Ten
dc.contributor.authorKataoka, Men
dc.contributor.authorTakeuchi, Yen
dc.contributor.authorMalhan, RKen
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T05:37:46Z-
dc.date.available2007-03-28T05:37:46Z-
dc.date.issued2006-
dc.identifier.issn0167-9317-
dc.identifier.urihttp://hdl.handle.net/2433/34851-
dc.language.isoeng-
dc.publisherELSEVIER SCIENCE BVen
dc.subjectsilicon carbideen
dc.subjectembedded epitaxial growthen
dc.subjecttrenchen
dc.subjectPn junctionen
dc.titleEmbedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristicsen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleMICROELECTRONIC ENGINEERINGen
dc.identifier.volume83-
dc.identifier.issue1-
dc.identifier.spage27-
dc.identifier.epage29-
dc.relation.doi10.1016/j.mee.2005.10.018-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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