1. Kyoto University Research Information Repository
  2. 090_Graduate School of Engineering
  3. Graduate School of Engineering Literature Database
Downloads: 0

    Please use this identifier to cite or link to this item: http://hdl.handle.net/2433/34851
Files in This Item:
There are no files associated with this item.
Title: Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics
Authors: Negoro, Y
Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Kataoka, M
Takeuchi, Y
Malhan, RK
Matsunami, H
Keywords: silicon carbide
embedded epitaxial growth
trench
Pn junction
Issue Date: 2006
Publisher: ELSEVIER SCIENCE BV
Journal title: MICROELECTRONIC ENGINEERING
Volume: 83
Issue: 1
Start page: 27
End page: 29
URI: http://hdl.handle.net/2433/34851
DOI(Published Version): 10.1016/j.mee.2005.10.018
Link: Web of Science
Appears in Collections:Graduate School of Engineering Literature Database

Show full item record

Export to RefWorks


Export Format: 


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.