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タイトル: | Applications of heavy-negative-ion sources for materials science (invited) |
著者: | Ishikawa, Junzo |
発行日: | Feb-2000 |
出版者: | American Institute of Physics |
誌名: | REVIEW OF SCIENTIFIC INSTRUMENTS |
巻: | 71 |
号: | 2 |
開始ページ: | 1036 |
終了ページ: | 1041 |
抄録: | Applications of heavy negative ions produced by sputter-type negative-ion sources for materials science are reviewed. Submilliampere and milliampere heavy-negative-ion beams can be produced by a neutral- and ionized-alkaline–metal-bombardment-type heavy-negative-ion source and rf plasma sputter-type negative-ion sources, respectively. These negative-ion beams can be applied for materials processing such as ion implantation, ion beam etching, and ion beam deposition. In negative-ion implantation the charge-up of implanted material surfaces is greatly reduced, and thus ion implantation without target charging is possible. The etching rate due to fluorine-negative ion is mainly determined by its kinetic energy. Pure diamondlike carbon films with high sp[3] structure have been prepared by C[−] and C_2[−]ion beam deposition, and CN films by CN[−]ion beam deposition. Negative ions provide an excellent tool for materials processing applications. |
著作権等: | Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
URI: | http://hdl.handle.net/2433/39802 |
DOI(出版社版): | 10.1063/1.1150380 |
出現コレクション: | 学術雑誌掲載論文等 |

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