このアイテムのアクセス数: 515

このアイテムのファイル:
ファイル 記述 サイズフォーマット 
RevSciInstrum_71_1036.pdf119.44 kBAdobe PDF見る/開く
タイトル: Applications of heavy-negative-ion sources for materials science (invited)
著者: Ishikawa, Junzo
発行日: Feb-2000
出版者: American Institute of Physics
誌名: REVIEW OF SCIENTIFIC INSTRUMENTS
巻: 71
号: 2
開始ページ: 1036
終了ページ: 1041
抄録: Applications of heavy negative ions produced by sputter-type negative-ion sources for materials science are reviewed. Submilliampere and milliampere heavy-negative-ion beams can be produced by a neutral- and ionized-alkaline–metal-bombardment-type heavy-negative-ion source and rf plasma sputter-type negative-ion sources, respectively. These negative-ion beams can be applied for materials processing such as ion implantation, ion beam etching, and ion beam deposition. In negative-ion implantation the charge-up of implanted material surfaces is greatly reduced, and thus ion implantation without target charging is possible. The etching rate due to fluorine-negative ion is mainly determined by its kinetic energy. Pure diamondlike carbon films with high sp[3] structure have been prepared by C[−] and C_2[−]ion beam deposition, and CN films by CN[−]ion beam deposition. Negative ions provide an excellent tool for materials processing applications.
著作権等: Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
URI: http://hdl.handle.net/2433/39802
DOI(出版社版): 10.1063/1.1150380
出現コレクション:学術雑誌掲載論文等

アイテムの詳細レコードを表示する

Export to RefWorks


出力フォーマット 


このリポジトリに保管されているアイテムはすべて著作権により保護されています。