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dc.contributor.authorKimoto, Ten
dc.contributor.authorMiyamoto, Nen
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:12:11Z-
dc.date.available2007-03-28T03:12:11Z-
dc.date.issued1999-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/2433/4864-
dc.language.isoeng-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen
dc.subjectcarrier lifetimeen
dc.subjecthigh-power deviceen
dc.subjectp-n diodeen
dc.subjectsilicon carbideen
dc.subjectsurface recombinationen
dc.titlePerformance limiting surface defects in SiC epitaxial p-n junction diodesen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleIEEE TRANSACTIONS ON ELECTRON DEVICESen
dc.identifier.volume46-
dc.identifier.issue3-
dc.identifier.spage471-
dc.identifier.epage477-
dc.relation.doi10.1109/16.748864-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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