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| Title: | Performance limiting surface defects in SiC epitaxial p-n junction diodes |
| Authors: | Kimoto, T    https://orcid.org/0000-0002-6649-2090 (unconfirmed)Miyamoto, N Matsunami, H |
| Keywords: | carrier lifetime high-power device p-n diode silicon carbide surface recombination |
| Issue Date: | 1999 |
| Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Journal title: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| Volume: | 46 |
| Issue: | 3 |
| Start page: | 471 |
| End page: | 477 |
| URI: | http://hdl.handle.net/2433/4864 |
| DOI(Published Version): | 10.1109/16.748864 |
| Link: | Web of Science |
| Appears in Collections: | Graduate School of Engineering Literature Database |
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