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dc.contributor.authorOgata, YHja
dc.contributor.authorYoshimi, Nja
dc.contributor.authorYasuda, Rja
dc.contributor.authorTsuboi, Tja
dc.contributor.authorSakka, Tja
dc.contributor.authorOtsuki, Aja
dc.date.accessioned2008-03-18T01:17:49Z-
dc.date.available2008-03-18T01:17:49Z-
dc.date.issued2001-12-15ja
dc.identifier.issn0021-8979ja
dc.identifier.urihttp://hdl.handle.net/2433/50429-
dc.language.isoengja
dc.publisherAMER INST PHYSICSja
dc.rightsCopyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.ja
dc.titleStructural change in p-type porous silicon by thermal annealingja
dc.identifier.urlhttp://link.aip.org/link/?jap/90/6487ja
dc.type.niitypeJournal Articleja
dc.identifier.jtitleJOURNAL OF APPLIED PHYSICSja
dc.identifier.volume90ja
dc.identifier.issue12ja
dc.identifier.spage6487ja
dc.identifier.epage6492ja
dc.relation.doi10.1063/1.1416862ja
dc.textversionpublisherja
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