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dc.contributor.authorNakamura, Sen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T04:23:58Z-
dc.date.available2007-03-28T04:23:58Z-
dc.date.issued2003-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/2433/6144-
dc.language.isoeng-
dc.publisherINST PURE APPLIED PHYSICSen
dc.subjectsilicon carbide (SiC)en
dc.subjectspiral growthen
dc.subjectstep-flow growthen
dc.subjectchemical vapordeposition (CVD)en
dc.subjectatomic force microscopy (AFM)en
dc.titleEffect of C/Si ratio on spiral growth on 6H-SiC (0001)en
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen
dc.identifier.volume42-
dc.identifier.issue7B-
dc.identifier.spageL846-
dc.identifier.epageL848-
dc.relation.doi10.1143/JJAP.42.L846-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
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