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dc.contributor.authorNegoro, Yen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:44:22Z-
dc.date.available2007-03-28T03:44:22Z-
dc.date.issued2003-
dc.identifier.issn8756-663X-
dc.identifier.urihttp://hdl.handle.net/2433/6280-
dc.language.isoeng-
dc.publisherSCRIPTA TECHNICA-JOHN WILEY & SONSen
dc.subjectsilicon carbideen
dc.subjectpower deviceen
dc.subjection implantationen
dc.subjectpn diodeen
dc.subjectavalanche breakdownen
dc.titleHigh-voltage 4H-SiC pn diodes fabricated by p-type ion implantationen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICSen
dc.identifier.volume86-
dc.identifier.issue12-
dc.identifier.spage44-
dc.identifier.epage51-
dc.relation.doi10.1002/ecjb.10162-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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