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dc.contributor.authorNegoro, Yen
dc.contributor.authorMiyamoto, Nen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T04:05:25Z-
dc.date.available2007-03-28T04:05:25Z-
dc.date.issued2002-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/2433/6284-
dc.language.isoeng-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen
dc.subjectavalanche breakdownen
dc.subjection implantationen
dc.subjectp-n diodeen
dc.subjectSiCen
dc.subjectsilicon carbideen
dc.titleAvalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantationen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleIEEE TRANSACTIONS ON ELECTRON DEVICESen
dc.identifier.volume49-
dc.identifier.issue9-
dc.identifier.spage1505-
dc.identifier.epage1510-
dc.relation.doi10.1109/TED.2002.802637-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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