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タイトル: | Growth of heavily Pb-substituted Bi-2201 single crystals by a floating zone method (SOLID STATE CHEMISTRY-Artificial Lattice Compounds) |
著者: | Terashima, Takahito Chong, Iksu Takano, Mikio |
キーワード: | Bi-2201 Single-crystal Floating Zone method Pb-Substitution Anisotropy |
発行日: | Mar-1998 |
出版者: | Institute for Chemical Research, Kyoto University |
誌名: | ICR Annual Report |
巻: | 4 |
開始ページ: | 18 |
終了ページ: | 19 |
抄録: | Single crystals of the heavily Pb-substituted Bi-2201 phase were grown to a typical planar shape of 6 x 3 x 0.03 mm3 by using a floating zone method [1]. These crystals with the highest Pb content ever reported are free from any structural modulation as examined by transmission electron microscopy, and the orthorhombic lattice parameters are a = 5.300(3) A, b = 5.392(3) A, and c = 24.603(5) A (V = 703.2 A3). Their superconducting properties can be modified within the over-doped region in such a way that the transition temperature, Tc, is raised from 3 K for the as-grown crystals to 23 K by annealing at 550 °C for 2 weeks in a vacuum of ~10-4 Pa. The out-of-plane resistivity of the as-grown crystals remains metallic down to 20 K, while it becomes semiconductive below 160 K after the annealing. |
URI: | http://hdl.handle.net/2433/65159 |
出現コレクション: | Vol.4 (1997) |
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