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dc.contributor.authorChen, Yen
dc.contributor.authorKimoto, Ten
dc.contributor.authorTakeuchi, Yen
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:55:45Z-
dc.date.available2007-03-28T03:55:45Z-
dc.date.issued2002-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/2433/8731-
dc.language.isoeng-
dc.publisherTRANS TECH PUBLICATIONS LTDen
dc.subject3C-SiC inclusionsen
dc.subjectanisotropyen
dc.subjecthomoepitaxyen
dc.subjectlateral growthen
dc.subjectmesa structuresen
dc.titleFormation of epitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substratesen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGSen
dc.identifier.volume389-3-
dc.identifier.spage255-
dc.identifier.epage258-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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