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dc.contributor.authorHatayama, Ten
dc.contributor.authorFuyuki, Ten
dc.contributor.authorNakamura, Sen
dc.contributor.authorKurobe, Ken
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T04:17:07Z-
dc.date.available2007-03-28T04:17:07Z-
dc.date.issued2000-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/2433/8753-
dc.language.isoeng-
dc.publisherTRANS TECH PUBLICATIONS LTDen
dc.subjectgas source molecular beam epitaxyen
dc.subjectRHEEDen
dc.subjectsurface structureen
dc.titleIn-situ RHEED analysis during alpha-SiC homoepitaxy on (0001)Si- and (000(1)over-bar)C-faces by gas source molecular beam epitaxyen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2en
dc.identifier.volume338-3-
dc.identifier.spage361-
dc.identifier.epage364-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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