Downloads: 0
Files in This Item:
There are no files associated with this item.
| Title: | In-situ RHEED analysis during alpha-SiC homoepitaxy on (0001)Si- and (000(1)over-bar)C-faces by gas source molecular beam epitaxy |
| Authors: | Hatayama, T Fuyuki, T Nakamura, S Kurobe, K Kimoto, T    https://orcid.org/0000-0002-6649-2090 (unconfirmed)Matsunami, H |
| Keywords: | gas source molecular beam epitaxy RHEED surface structure |
| Issue Date: | 2000 |
| Publisher: | TRANS TECH PUBLICATIONS LTD |
| Journal title: | SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 |
| Volume: | 338-3 |
| Start page: | 361 |
| End page: | 364 |
| URI: | http://hdl.handle.net/2433/8753 |
| Link: | Web of Science |
| Appears in Collections: | Graduate School of Engineering Literature Database |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.