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dc.contributor.authorNegoro, Yen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:33:09Z-
dc.date.available2007-03-28T03:33:09Z-
dc.date.issued2005-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/2433/8843-
dc.language.isoeng-
dc.publisherTRANS TECH PUBLICATIONS LTDen
dc.subjectimplantationen
dc.subjectdevice processen
dc.subjectannealingen
dc.subjectdiffusionen
dc.subject(11-20) faceen
dc.subjectgraphite capen
dc.titleTechnological aspects of ion implantation in SiC device processesen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSILICON CARBIDE AND RELATED MATERIALS 2004en
dc.identifier.volume483-
dc.identifier.spage599-
dc.identifier.epage604-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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