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Title: Technological aspects of ion implantation in SiC device processes
Authors: Negoro, Y
Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Matsunami, H
Keywords: implantation
device process
annealing
diffusion
(11-20) face
graphite cap
Issue Date: 2005
Publisher: TRANS TECH PUBLICATIONS LTD
Journal title: SILICON CARBIDE AND RELATED MATERIALS 2004
Volume: 483
Start page: 599
End page: 604
URI: http://hdl.handle.net/2433/8843
Link: Web of Science
Appears in Collections:Graduate School of Engineering Literature Database

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