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dc.contributor.authorOkada, Ten
dc.contributor.authorKimoto, Ten
dc.contributor.authorYamai, Ken
dc.contributor.authorMatsunami, Hen
dc.contributor.authorInoko, Fen
dc.date.accessioned2007-03-28T04:12:21Z-
dc.date.available2007-03-28T04:12:21Z-
dc.date.issued2004-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/2433/8853-
dc.language.isoeng-
dc.publisherTRANS TECH PUBLICATIONS LTDen
dc.subject4H-SiCen
dc.subjecthomoepitaxyen
dc.subjectsurface morphological defecten
dc.subjectcrystallographic defecten
dc.subjecttransmission electron microscopy (TEM)en
dc.titleCrystallographic defects under surface morphological defects of 4H-SiC homoepitaxial filmsen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2en
dc.identifier.volume457-460-
dc.identifier.spage521-
dc.identifier.epage524-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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