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dc.contributor.authorSaitoh, Hen
dc.contributor.authorKimoto, Ten
dc.date.accessioned2007-03-28T04:15:28Z-
dc.date.available2007-03-28T04:15:28Z-
dc.date.issued2005-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/2433/8861-
dc.language.isoeng-
dc.publisherTRANS TECH PUBLICATIONS LTDen
dc.subjecthomoepitaxial growthen
dc.subjectoff-angleen
dc.subjectchemical vapor depositionen
dc.subjectC/Si ratioen
dc.subjectcarrier concentrationen
dc.title4H-SiC epitaxial growth on SiC substrates with various off-anglesen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSILICON CARBIDE AND RELATED MATERIALS 2004en
dc.identifier.volume483-
dc.identifier.spage89-
dc.identifier.epage92-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
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