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dc.contributor.authorShigiltchoff, Oen
dc.contributor.authorKimoto, Ten
dc.contributor.authorHobgood, Den
dc.contributor.authorNeudeck, PGen
dc.contributor.authorPorter, LMen
dc.contributor.authorDevaty, RPen
dc.contributor.authorChoyke, WJen
dc.date.accessioned2007-03-28T04:17:49Z-
dc.date.available2007-03-28T04:17:49Z-
dc.date.issued2002-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/2433/8876-
dc.language.isoeng-
dc.publisherTRANS TECH PUBLICATIONS LTDen
dc.subjectbreakdownen
dc.subjectC-V measurementsen
dc.subjectI-Ven
dc.subjectinternal photoemissionen
dc.subjectSchottky barrieren
dc.titleSchottky barriers for Pt on 6H-and 4H-SiC (0001), (000(1)over-bar), (1(1)over-bar00) and (1(2)over-bar10) faces measured by I-V, C-V and internal photoemissionen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGSen
dc.identifier.volume389-3-
dc.identifier.spage921-
dc.identifier.epage924-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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