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dc.contributor.authorTamura, Sen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.contributor.authorOkada, Men
dc.contributor.authorKanazawa, Sen
dc.contributor.authorKimura, Ien
dc.date.accessioned2007-03-28T03:24:54Z-
dc.date.available2007-03-28T03:24:54Z-
dc.date.issued2000-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/2433/8887-
dc.language.isoeng-
dc.publisherTRANS TECH PUBLICATIONS LTDen
dc.subjectannealingen
dc.subjectdeep level analysisen
dc.subjectelectrical characteristicsen
dc.subjectnuclear transmutation dopingen
dc.subjectphosphorusen
dc.subjectPLen
dc.subjectRBSen
dc.titleNuclear transmutation doping of phosphorus into 6H-SiCen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2en
dc.identifier.volume338-3-
dc.identifier.spage849-
dc.identifier.epage852-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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