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Title: Nuclear transmutation doping of phosphorus into 6H-SiC
Authors: Tamura, S
Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Matsunami, H
Okada, M
Kanazawa, S
Kimura, I
Keywords: annealing
deep level analysis
electrical characteristics
nuclear transmutation doping
phosphorus
PL
RBS
Issue Date: 2000
Publisher: TRANS TECH PUBLICATIONS LTD
Journal title: SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2
Volume: 338-3
Start page: 849
End page: 852
URI: http://hdl.handle.net/2433/8887
Link: Web of Science
Appears in Collections:Graduate School of Engineering Literature Database

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