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dc.contributor.authorYoshimoto, Men
dc.contributor.authorGoto, Men
dc.contributor.authorSaraie, Jen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T04:13:31Z-
dc.date.available2007-03-28T04:13:31Z-
dc.date.issued2000-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/2433/8923-
dc.language.isoeng-
dc.publisherTRANS TECH PUBLICATIONS LTDen
dc.subjectdefecten
dc.subjectdonor-acceptor pairsen
dc.subjectexcitonic emissionen
dc.subjectimpurityen
dc.subjectnon-radiative recombinationen
dc.subjectphotoluminescence imageen
dc.subjectpolytypismen
dc.subjectsub-micron resolutionen
dc.titleSub-mu m scale photoluminescence image of SiC and GaN at a low temperatureen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2en
dc.identifier.volume338-3-
dc.identifier.spage627-
dc.identifier.epage630-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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