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Title: Epitaxial growth of Bi thin films on Ge(1 1 1)
Authors: Hatta, Shinichiro  kyouindb  KAKEN_id
Ohtsubo, Yoshiyuki
Miyamoto, Sanae
Okuyama, Hiroshi  kyouindb  KAKEN_id
Aruga, Tetsuya  kyouindb  KAKEN_id
Author's alias: 八田, 振一郎
有賀, 哲也
Keywords: Bismuth
Ge(1 1 1)
Low-energy electron diffraction
Scanning tunneling microscopy
Thin film growth
Issue Date: 30-Nov-2009
Publisher: Elsevier
Journal title: Applied Surface Science
Volume: 256
Issue: 4
Start page: 1252
End page: 1256
Abstract: We investigated Bi thin film growth on Ge(1 1 1) by using low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). In the submonolayer regime, adsorbed Bi atoms form patches of the (2×1) structure. However, the structure does not grow to a long-range order. Following the formation of a (1×1) monolayer (ML) film, two-dimensional (1 1 0)-orientated Bi islands grow. The film orientation changes from (1 1 0) to (1 1 1) at 6–10 ML. The (1 1 0)-oriented Bi film shows a six-domain LEED pattern with missing spots, associated with a glide-line symmetry. The hexagonal (1 1 1) film at 14 ML has a lattice constant 2% smaller than bulk Bi(1 1 1).
Rights: c 2008 Elsevier B.V. All rights reserved.
This is not the published version. Please cite only the published version. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。
DOI(Published Version): 10.1016/j.apsusc.2009.05.079
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