検索
検索条件の追加:
検索条件を追加することで検索結果を絞り込むことができます。
検索結果表示: 1-3 / 3.
- 前
- 1
- 次
検索結果:
| 書誌情報 | ファイル |
|---|---|
| Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2005) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(7A): 4909-4910 | |
| Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition Fujiwara, H; Danno, K; Kimoto, T; Tojo, T; Matsunami, H (2005) JOURNAL OF CRYSTAL GROWTH, 281(2-4): 370-376 | |
| 4H-SiC epitaxial growth on SiC substrates with various off-angles Saitoh, H; Kimoto, T (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 89-92 |