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書誌情報 | ファイル |
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Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2005) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(7A): 4909-4910 | |
Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (112(-)over-bar) formed by N2O oxidation Kimoto, T; Kanzaki, Y; Noborio, M; Kawano, H; Matsunami, H (2005) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 44(3): 1213-1218 |