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書誌情報 | ファイル |
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Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy Yoshikawa, M.; Ogawa, S.; Inoue, K.; Seki, H.; Tanahashi, Y.; Sako, H.; Nanen, Y.; Kato, M.; Kimoto, T. (2012-02-20) APPLIED PHYSICS LETTERS, 100(8) | |
Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC Sasaki, S.; Kawahara, K.; Feng, G.; Alfieri, G.; Kimoto, T. (2011-01-01) JOURNAL OF APPLIED PHYSICS, 109(1) | |
Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2011-06-01) JOURNAL OF APPLIED PHYSICS, 109(11) | |
Analytical model for reduction of deep levels in SiC by thermal oxidation Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu (2012-03) Journal of Applied Physics, 111(5) | |
Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers Kimoto, Tsunenobu; Hiyoshi, Toru; Hayashi, Toshihiko; Suda, Jun (2010-10) Journal of Applied Physics, 108(8) | |
High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime Zippelius, Bernd; Suda, Jun; Kimoto, Tsunenobu (2012-02-01) JOURNAL OF APPLIED PHYSICS, 111(3) | |
Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers Hayashi, T.; Asano, K.; Suda, J.; Kimoto, T. (2012-09) Journal of Applied Physics, 112(6) |