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| 書誌情報 | ファイル |
|---|---|
| Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition Fujiwara, H; Danno, K; Kimoto, T; Tojo, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 205-208 | |
| Synthesis and properties of polyacetylenes containing carbazolylmethyl groups Sanda, F; Kawasaki, R; Shiotsuki, M; Masuda, T (2004) POLYMER, 45(23): 7831-7837 | |
| Luminescence properties of spark-processed SiC Chang, SS; Sakai, A (2004) MATERIALS LETTERS, 58(7-8): 1212-1217 | |
| Submicron-scale photoluminescence of InGaN/GaN probed by confocal scanning laser microscopy Okamoto, K; Choi, J; Kawakami, Y; Terazima, M; Mukai, T; Fujita, S (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(2): 839-840 | |
| Indium concentration influence on PL spatial inhomogeneity in InGaN single quantum well structures detected by original low-cost near-field probes Micheletto, R; Yoshimatsu, N; Kaneta, A; Kawakami, Y; Fujita, S (2004) APPLIED SURFACE SCIENCE, 229(1-4): 338-345 |