検索
検索条件の追加:
検索条件を追加することで検索結果を絞り込むことができます。
検索結果表示: 1-3 / 3.
- 前
- 1
- 次
検索結果:
| 書誌情報 | ファイル |
|---|---|
| Recent achievements and future challenges in SiC homoepitaxial growth Kimoto, T; Nakazawa, S; Fujihira, K; Hirao, T; Nakamura, S; Chen, Y; Hashimoto, K; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 165-170 | |
| Formation of epitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates Chen, Y; Kimoto, T; Takeuchi, Y; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 255-258 | |
| Selective homoepitaxy of 4H-SiC on (0001) and (1 1 (2)over-bar 0) masked substrates Chen, Y; Kimoto, T; Takeuchi, Y; Matsunami, H (2002) JOURNAL OF CRYSTAL GROWTH, 237: 1224-1229 |