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| 書誌情報 | ファイル |
|---|---|
| Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering Kim, KK; Tampo, H; Song, JO; Seong, TY; Park, SJ; Lee, JM; Kim, SW; Fujita, S; Niki, S (2005) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(7A): 4776-4779 | |
| Time-space-resolved photoluminescence from (Zn,Cd)Se-based quantum structures Okamoto, K; Ko, HC; Kawakami, Y; Fujita, S (2000) JOURNAL OF CRYSTAL GROWTH, 214: 639-645 | |
| ZnO growth toward optical devices by MOVPE using N2O Ogata, K; Maejima, K; Fujita, S; Fujita, S (2001) JOURNAL OF ELECTRONIC MATERIALS, 30(6): 659-661 | |
| Improvements of ZnO qualities grown by metal-organic vapor phase epitaxy using a molecular beam epitaxy grown ZnO layer as a substrate Ogata, K; Kawanishi, T; Maejima, K; Sakurai, K; Fujita, S; Fujita, S (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(7A): L657-L659 | |
| Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n <= 4) substrates Feng, JM; Asai, K; Narukawa, Y; Kawakami, Y; Fujita, S; Ohachi, T (2000) APPLIED SURFACE SCIENCE, 159: 532-539 | |
| Submicron-scale photoluminescence of InGaN/GaN probed by confocal scanning laser microscopy Okamoto, K; Choi, J; Kawakami, Y; Terazima, M; Mukai, T; Fujita, S (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(2): 839-840 | |
| Indium concentration influence on PL spatial inhomogeneity in InGaN single quantum well structures detected by original low-cost near-field probes Micheletto, R; Yoshimatsu, N; Kaneta, A; Kawakami, Y; Fujita, S (2004) APPLIED SURFACE SCIENCE, 229(1-4): 338-345 |
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