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書誌情報 | ファイル |
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Robust stability of sampled-data systems under possibly unstable additive/multiplicative perturbations Hagiwara, T; Araki, M (1998-09) IEEE Transactions on Automatic Control, 43(9): 1340-1346 | |
Theory of solvation-induced reentrant phase separation in polymer solutions Matsuyama, Akihiko; Tanaka, Fumihiko (1990-07-16) Physical Review Letters, 65(3): 341-344 | |
Titanium nitride prepared by plasma-based titanium-ion implantation Yukimura, K; Sano, M; Maruyama, T; Kurooka, S; Suzuki, Y; Chayahara, A; Kinomura, A; Horino, Y (1999) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 17(2): 840-844 | |
Copper nitride thin films prepared by radio-frequency reactive sputtering MARUYAMA, T; MORISHITA, T (1995-09-15) JOURNAL OF APPLIED PHYSICS, 78(6): 4104-4107 | |
Indium nitride thin films prepared by radio-frequency reactive sputtering MARUYAMA, T; MORISHITA, T (1994-11-15) JOURNAL OF APPLIED PHYSICS, 76(10): 5809-5812 | |
Tin nitride thin films prepared by radio-frequency reactive sputtering MARUYAMA, T; MORISHITA, T (1995-06-15) JOURNAL OF APPLIED PHYSICS, 77(12): 6641-6645 | |
Silicon dioxide thin films prepared by chemical vapor deposition from tetrakis(diethylamino)silane and ozone MARUYAMA, T; OHTANI, S (1994-05-23) APPLIED PHYSICS LETTERS, 64(21): 2800-2802 | |
Germanium- and silicon-doped indium-oxide thin films prepared by radio-frequency magnetron sputtering MARUYAMA, T; TAGO, T (1994-03-14) APPLIED PHYSICS LETTERS, 64(11): 1395-1397 | |
Electrochromic properties of niobium oxide thin films prepared by radio-frequency magnetron sputtering method MARUYAMA, T; ARAI, S (1993-08-16) APPLIED PHYSICS LETTERS, 63(7): 869-870 | |
Copper nitride and tin nitride thin films for write-once optical recording media Maruyama, T; Morishita, T (1996-08-12) APPLIED PHYSICS LETTERS, 69(7): 890-891 |