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| 書誌情報 | ファイル |
|---|---|
| Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching Nakamura, S; Kimoto, T; Matsunami, H; Tanaka, S; Teraguchi, N; Suzuki, A (2000) APPLIED PHYSICS LETTERS, 76(23): 3412-3414 | |
| Optical cross sections of deep levels in 4H-SiC Kato, M; Tanaka, S; Ichimura, M; Arai, E; Nakamura, S; Kimoto, T; Passler, R (2006) JOURNAL OF APPLIED PHYSICS, 100(5) | |
| Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition Kato, M; Tanaka, S; Ichimura, M; Arai, E; Nakamura, S; Kimoto, T (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 381-384 | |
| Optical cross sections of deep levels in 4H-SiC Kato, M; Tanaka, S; Ichimura, M; Arai, E; Nakamura, S; Kimoto, T; Passler, R (2006-09-01) JOURNAL OF APPLIED PHYSICS, 100(5) |  |