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| 書誌情報 | ファイル |
|---|---|
| Fast growth and doping characteristics of alpha-SiC in horizontal cold-wall chemical vapor deposition Nakamura, S; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 183-186 | |
| Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor Bai, S; Wagner, G; Shishkin, E; Choyke, WJ; Devaty, RP; Zhang, M; Pirouz, P; Kimoto, T (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 589-592 | |
| Fast epitaxial growth of 4H-SiC by chimney-type hot-wall CVD Fujihira, K; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 175-178 | |
| Fast epitaxial growth of high-quality 4H-SiC by vertical hot-wall CVD Fujihira, K; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 161-164 |