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| 書誌情報 | ファイル |
|---|---|
| Growth behavior of nonpolar ZnO on M-plane and R-plane sapphire by metalorganic vapor phase epitaxy Moriyama, T; Fujita, S (2005) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(11): 7919-7921 | |
| Growth of ZnO nanorods on A-plane (11(2)over-bar-0) sapphire by metal-organic vapor phase epitaxy Maejima, K; Ueda, M; Fujita, S; Fujita, S (2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(5A): 2600-2604 | |
| AlAs/GaAs(001) as a template for c-oriented hexagonal GaN grown by metalorganic vapor-phase epitaxy Ishido, T; Funato, M; Hamaguchi, A; Fujita, S; Fujita, S (2000) JOURNAL OF CRYSTAL GROWTH, 221: 280-285 | |
| ZnO growth toward optical devices by MOVPE using N2O Ogata, K; Maejima, K; Fujita, S; Fujita, S (2001) JOURNAL OF ELECTRONIC MATERIALS, 30(6): 659-661 | |
| Improvements of ZnO qualities grown by metal-organic vapor phase epitaxy using a molecular beam epitaxy grown ZnO layer as a substrate Ogata, K; Kawanishi, T; Maejima, K; Sakurai, K; Fujita, S; Fujita, S (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(7A): L657-L659 | |
| The role of growth rates and buffer layer structures for quality improvement of cubic GaN grown on GaAs Ogawa, M; Funato, M; Ishido, T; Fujita, S; Fujita, S (2000) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 39(2A): L69-L72 |
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