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| 書誌情報 | ファイル |
|---|---|
| Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor Bai, S; Wagner, G; Shishkin, E; Choyke, WJ; Devaty, RP; Zhang, M; Pirouz, P; Kimoto, T (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 589-592 | |
| Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers Camarda, Massimo; Canino, Andrea; La Magna, Antonino; La Via, Francesco; Feng, G.; Kimoto, T.; Aoki, M.; Kawanowa, H. (2011-02) APPLIED PHYSICS LETTERS, 98(5) |  |
| Triple Shockley type stacking faults in 4H-SiC epilayers Feng, Gan; Suda, Jun; Kimoto, Tsunenobu (2009-03) APPLIED PHYSICS LETTERS, 94(9) | |
| Triple Shockley type stacking faults in 4H-SiC epilayers Feng, Gan; Suda, Jun; Kimoto, Tsunenobu (2009) APPLIED PHYSICS LETTERS, 94(9) |