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dc.contributor.authorNegoro, Yen
dc.contributor.authorMiyamoto, Nen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2006-12-25T02:30:15Z-
dc.date.available2006-12-25T02:30:15Z-
dc.date.issued2002-01-14-
dc.identifier.citationY. Negoro et al., Appl. Phys. Lett. 80-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2433/24204-
dc.format.extent124759 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.titleRemarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0)en
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00543431-
dc.identifier.jtitleApplied Physics Lettersen
dc.identifier.volume80-
dc.identifier.issue2-
dc.identifier.spage240-
dc.identifier.epage242-
dc.relation.doi10.1063/1.1432745-
dc.textversionpublisher-
dc.relation.urlhttp://link.aip.org/link/?apl/80/240-
dcterms.accessRightsopen access-
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