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Title: Electrodeposition of Crystalline Si Films in KF–KCl Melts Using SiCl₄ Gas as a Si Source
Authors: Yasuda, Kouji
Saeki, Kazumi
Hagiwara, Rika  kyouindb  KAKEN_id  orcid (unconfirmed)
Homma, Takayuki
Nohira, Toshiyuki
Author's alias: 安田, 幸司
佐伯, 一麦
萩原, 理加
野平, 俊之
Issue Date: Jun-2017
Publisher: 電気化学会
Journal title: Proceeding of 6th Asian Conference on Molten Salt Chemistry and Technology
Thesis number: presentation OA07
Abstract: With the aim of developing a new production process of crystalline Si films, the electrodeposition of Si has been investigated in a water-soluble KF–KCl molten salt containing K₂SiF₆at 923 K and 1073 K. Cyclic voltammetry and galvanostatic electrolysis confirm that electrodeposition of crystalline Si on a silver substrate occurs at more negative potential than 0.8 V (vs. K⁺/K). The crystallite size of the deposited Si significantly increases when the experiment temperature is raised from 923 K to 1023 K. The electrodeposition of Si in the KF–KCl salt after the introduction of SiCl₄ was also confirmed.
Description: 6th Asian Conference on Molten Salt Chemistry and Technology, Gyeongju, Korea, 13-16 June, 2017.
Rights: 発行元の許可を得て掲載しています。
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