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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Watanabe, Naoki | en |
dc.contributor.author | Kimoto, Tsunenobu | en |
dc.contributor.author | Suda, Jun | en |
dc.date.accessioned | 2009-08-04T10:12:56Z | - |
dc.date.available | 2009-08-04T10:12:56Z | - |
dc.date.issued | 2008-11-15 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/2433/84572 | - |
dc.description.abstract | The temperature dependence of the refractive indices of GaN and AlN was investigated in the wavelength range from the near band edge (367 nm for GaN and 217 nm for AlN) to 1000 nm and the temperature range from room temperature to 515 °C. Optical interference measurements with vertical incident configuration were employed to precisely evaluate the ordinary refractive indices. | en |
dc.language.iso | eng | - |
dc.publisher | American Institute of Physics | en |
dc.rights | Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | en |
dc.subject | aluminium compounds | en |
dc.subject | gallium compounds | en |
dc.subject | III-V semiconductors | en |
dc.subject | refractive index | en |
dc.subject | wide band gap semiconductors | en |
dc.title | The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees C | en |
dc.type | journal article | - |
dc.type.niitype | Journal Article | - |
dc.identifier.ncid | AA00693547 | - |
dc.identifier.jtitle | JOURNAL OF APPLIED PHYSICS | en |
dc.identifier.volume | 104 | - |
dc.identifier.issue | 10 | - |
dc.relation.doi | 10.1063/1.3021148 | - |
dc.textversion | publisher | - |
dc.identifier.artnum | 106101 | - |
dc.relation.url | http://link.aip.org/link/?JAPIAU/104/106101/1 | - |
dcterms.accessRights | open access | - |
Appears in Collections: | Journal Articles |
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