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dc.contributor.authorWatanabe, Naokien
dc.contributor.authorKimoto, Tsunenobuen
dc.contributor.authorSuda, Junen
dc.date.accessioned2009-08-04T10:12:56Z-
dc.date.available2009-08-04T10:12:56Z-
dc.date.issued2008-11-15-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2433/84572-
dc.description.abstractThe temperature dependence of the refractive indices of GaN and AlN was investigated in the wavelength range from the near band edge (367 nm for GaN and 217 nm for AlN) to 1000 nm and the temperature range from room temperature to 515 °C. Optical interference measurements with vertical incident configuration were employed to precisely evaluate the ordinary refractive indices.en
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.subjectaluminium compoundsen
dc.subjectgallium compoundsen
dc.subjectIII-V semiconductorsen
dc.subjectrefractive indexen
dc.subjectwide band gap semiconductorsen
dc.titleThe temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees Cen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00693547-
dc.identifier.jtitleJOURNAL OF APPLIED PHYSICSen
dc.identifier.volume104-
dc.identifier.issue10-
dc.relation.doi10.1063/1.3021148-
dc.textversionpublisher-
dc.identifier.artnum106101-
dc.relation.urlhttp://link.aip.org/link/?JAPIAU/104/106101/1-
dcterms.accessRightsopen access-
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