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| Title: | The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees C |
| Authors: | Watanabe, Naoki Kimoto, Tsunenobu    https://orcid.org/0000-0002-6649-2090 (unconfirmed)Suda, Jun |
| Keywords: | aluminium compounds gallium compounds III-V semiconductors refractive index wide band gap semiconductors |
| Issue Date: | 15-Nov-2008 |
| Publisher: | American Institute of Physics |
| Journal title: | JOURNAL OF APPLIED PHYSICS |
| Volume: | 104 |
| Issue: | 10 |
| Thesis number: | 106101 |
| Abstract: | The temperature dependence of the refractive indices of GaN and AlN was investigated in the wavelength range from the near band edge (367 nm for GaN and 217 nm for AlN) to 1000 nm and the temperature range from room temperature to 515 °C. Optical interference measurements with vertical incident configuration were employed to precisely evaluate the ordinary refractive indices. |
| Rights: | Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
| URI: | http://hdl.handle.net/2433/84572 |
| DOI(Published Version): | 10.1063/1.3021148 |
| Related Link: | http://link.aip.org/link/?JAPIAU/104/106101/1 |
| Appears in Collections: | Journal Articles |
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