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| 書誌情報 | ファイル |
|---|---|
| 4H-SiC (11(2)over-bar-0) epitaxial growth Kimoto, T; Yamamoto, T; Chen, ZY; Yano, H; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 189-192 | |
| Sub-mu m scale photoluminescence image of SiC and GaN at a low temperature Yoshimoto, M; Goto, M; Saraie, J; Kimoto, T; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 627-630 | |
| Interface states of SiO2/SiC on (11(2)over-bar-0) and (0001) Si faces Yano, N; Kimoto, T; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-3: 627-630 | |
| Vanadium ion implanted guard rings for high-voltage 4H-SiC Schottky rectifiers Hatayama, T; Yoneda, T; Nakata, T; Watanabe, M; Kimoto, T; Matsunami, H (2000) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 39(12A): L1216-L1218 |