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| 書誌情報 | ファイル |
|---|---|
| Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(7A): 4105-4109 | |
| Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2005) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(7A): 4909-4910 | |
| Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition Kimoto, T; Tamura, S; Chen, Y; Fujihira, K; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4B): L374-L376 |