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| 書誌情報 | ファイル |
|---|---|
| High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation Negoro, Y; Kimoto, T; Matsunami, H (2003) ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 86(12): 44-51 | |
| Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(9): 1505-1510 | |
| Robust 4H-SiC pn diodes fabricated using (1120) face Negoro, Y; Kimoto, T; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(2): 471-476 | |
| Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics Negoro, Y; Kimoto, T; Kataoka, M; Takeuchi, Y; Malhan, RK; Matsunami, H (2006) MICROELECTRONIC ENGINEERING, 83(1): 27-29 |
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