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| 書誌情報 | ファイル |
|---|---|
| High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation Negoro, Y; Kimoto, T; Matsunami, H (2003) ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 86(12): 44-51 | |
| High-voltage 4H-SiC Schottky barrier diodes fabricated on (03(3)over-bar8) with closed micropipes Kimoto, T; Fujimiza, K; Shiomi, H; Matsunami, H (2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42(1A-B): L13-L16 | |
| High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes Tamura, S; Fujihira, K; Kimoto, T; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4A): L319-L322 |